2SD1803T-E onsemi
Hersteller: onsemiDescription: TRANS NPN 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 19358 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 791+ | 0.63 EUR |
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Technische Details 2SD1803T-E onsemi
Description: TRANS NPN 50V 5A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V, Frequency - Transition: 180MHz, Supplier Device Package: TP, Part Status: Obsolete, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1 W.
Weitere Produktangebote 2SD1803T-E nach Preis ab 1.02 EUR bis 2.03 EUR
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2SD1803T-E | Hersteller : onsemi |
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auf Bestellung 443 Stücke: Lieferzeit 14-28 Tag (e) |
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| 2SD1803T-E | Hersteller : ONSEMI |
Description: ONSEMI - 2SD1803T-E - TRANSISTOR, BIPOLAR, NPN, 50V, 5A-TO-251 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 19358 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD1803T-E | Hersteller : ON Semiconductor |
Trans GP BJT NPN 50V 5A 1000mW 3-Pin(3+Tab) IPAK Bag |
Produkt ist nicht verfügbar |
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2SD1803T-E | Hersteller : onsemi |
Description: TRANS NPN 50V 5A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 180MHz Supplier Device Package: TP Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
Produkt ist nicht verfügbar |