Produkte > ONSEMI > 2SD1815S-H

2SD1815S-H onsemi

Name: 2SD1815S-H
Brand: onsemi
SKU: 12469028-3
Price: 0.79 EUR
Availability: InStock

Hersteller: onsemi
Description: TRANS NPN 100V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W

auf Bestellung 2500 Stücke:

Lieferzeit 21-28 Tag (e)

Anzahl	Preis ohne MwSt
919+	0.79 EUR

Mindestbestellmenge: 919

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Technische Details 2SD1815S-H onsemi

Description: TRANS NPN 100V 3A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V, Frequency - Transition: 180MHz, Supplier Device Package: TP, Part Status: Obsolete, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1 W.

Weitere Produktangebote 2SD1815S-H

Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit
2SD1815S-H	Hersteller : ONSEMI	Description: ONSEMI - 2SD1815S-H - 2SD1815S-H, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023)	auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e)
2SD1815S-H	Hersteller : ON Semiconductor	Trans GP BJT NPN 100V 3A 1000mW 3-Pin(3+Tab) TP Bag	Produkt ist nicht verfügbar
2SD1815S-H	Hersteller : onsemi	Description: TRANS NPN 100V 3A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V Frequency - Transition: 180MHz Supplier Device Package: TP Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W	Produkt ist nicht verfügbar