2SD1816T-H onsemi
Hersteller: onsemi
Description: TRANS NPN 100V 4A TP
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TP
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
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Technische Details 2SD1816T-H onsemi
Description: TRANS NPN 100V 4A TP, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 4 A, Part Status: Obsolete, Supplier Device Package: TP, Frequency - Transition: 180MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk.
Weitere Produktangebote 2SD1816T-H
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
2SD1816T-H | ON Semiconductor |
Bipolar Transistors - BJT BIP NPN 4A 100V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2SD1816T-H |
|
Hersteller: ON Semiconductor
Bipolar Transistors - BJT BIP NPN 4A 100V
Bipolar Transistors - BJT BIP NPN 4A 100V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH