2SD2195T100 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: TRANS NPN DARL 100V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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Technische Details 2SD2195T100 Rohm Semiconductor
Description: TRANS NPN DARL 100V 2A MPT3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 2V, Frequency - Transition: 80MHz, Supplier Device Package: MPT3, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 2 W.
Weitere Produktangebote 2SD2195T100
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2SD2195T100 | Hersteller : Rohm Semiconductor |
Description: TRANS NPN DARL 100V 2A MPT3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 2V Frequency - Transition: 80MHz Supplier Device Package: MPT3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
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| 2SD2195T100 | Hersteller : ROHM Semiconductor |
Darlington Transistors DARL NPN 100V 2A |
Produkt ist nicht verfügbar |