2SD2351T106V Rohm Semiconductor
auf Bestellung 43882 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1061+ | 0.15 EUR |
| 1065+ | 0.14 EUR |
| 1309+ | 0.11 EUR |
| 2000+ | 0.1 EUR |
| 3000+ | 0.095 EUR |
| 6000+ | 0.09 EUR |
| 12000+ | 0.078 EUR |
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Technische Details 2SD2351T106V Rohm Semiconductor
Description: TRANS NPN 50V 0.15A UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 300nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 1mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: UMT3, Current - Collector (Ic) (Max): 150 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW.
Weitere Produktangebote 2SD2351T106V nach Preis ab 0.17 EUR bis 0.94 EUR
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2SD2351T106V | Hersteller : Rohm Semiconductor |
 Description: TRANS NPN 50V 0.15A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 300nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 1mA, 5V Frequency - Transition: 250MHz Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD2351T106V | Hersteller : Rohm Semiconductor |
Trans GP BJT NPN 50V 0.15A 200mW 3-Pin UMT T/R |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD2351T106V | Hersteller : Rohm Semiconductor |
Trans GP BJT NPN 50V 0.15A 200mW 3-Pin UMT T/R |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD2351T106V | Hersteller : Rohm Semiconductor |
Description: TRANS NPN 50V 0.15A UMT3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 300nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 1mA, 5V Frequency - Transition: 250MHz Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 5693 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD2351T106V | Hersteller : ROHM Semiconductor |
Bipolar Transistors - BJT NPN 50V 150MA |
auf Bestellung 76 Stücke: Lieferzeit 14-28 Tag (e) |
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2SD2351T106V | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323 Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Type of transistor: NPN Current gain: 820...1800 Frequency: 250MHz Collector current: 0.15A Collector-emitter voltage: 50V Power dissipation: 0.2W Polarisation: bipolar Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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2SD2351T106V | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323 Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Type of transistor: NPN Current gain: 820...1800 Frequency: 250MHz Collector current: 0.15A Collector-emitter voltage: 50V Power dissipation: 0.2W Polarisation: bipolar |
Produkt ist nicht verfügbar |