2SD2351T106V Rohm Semiconductor
auf Bestellung 43072 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 827+ | 0.17 EUR |
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Technische Details 2SD2351T106V Rohm Semiconductor
Description: TRANS NPN 50V 0.15A UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 300nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 1mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: UMT3, Current - Collector (Ic) (Max): 150 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW.
Weitere Produktangebote 2SD2351T106V nach Preis ab 0.16 EUR bis 0.86 EUR
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2SD2351T106V | Hersteller : Rohm Semiconductor |
 Description: TRANS NPN 50V 0.15A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 300nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 1mA, 5V Frequency - Transition: 250MHz Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD2351T106V | Hersteller : Rohm Semiconductor |
Trans GP BJT NPN 50V 0.15A 200mW 3-Pin UMT T/R |
auf Bestellung 1690 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD2351T106V | Hersteller : Rohm Semiconductor |
Trans GP BJT NPN 50V 0.15A 200mW 3-Pin UMT T/R |
auf Bestellung 472 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD2351T106V | Hersteller : ROHM Semiconductor |
Bipolar Transistors - BJT NPN 50V 150MA |
auf Bestellung 4045 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD2351T106V | Hersteller : Rohm Semiconductor |
Description: TRANS NPN 50V 0.15A UMT3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 300nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 1mA, 5V Frequency - Transition: 250MHz Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 6191 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD2351T106V | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323 Mounting: SMD Case: SC70; SOT323 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 820...1800 Collector current: 0.15A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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2SD2351T106V | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323 Mounting: SMD Case: SC70; SOT323 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 820...1800 Collector current: 0.15A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |