Technische Details 2SD2652T106 Rohm Semiconductor
Description: TRANS NPN 12V 1.5A UMT3, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 12 V, Current - Collector (Ic) (Max): 1.5 A, Supplier Device Package: UMT3, Frequency - Transition: 400MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2SD2652T106 nach Preis ab 0.2 EUR bis 1.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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2SD2652T106 | Rohm Semiconductor |
 Trans GP BJT NPN 12V 1.5A 200mW 3-Pin UMT T/R |
auf Bestellung 1995 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD2652T106 | Rohm Semiconductor |
Description: TRANS NPN 12V 1.5A UMT3 Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 1.5 A Supplier Device Package: UMT3 Frequency - Transition: 400MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD2652T106 | Rohm Semiconductor |
Trans GP BJT NPN 12V 1.5A 200mW 3-Pin UMT T/R |
auf Bestellung 13210 Stücke: Lieferzeit 14-21 Tag (e) |
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2SD2652T106 | ROHM Semiconductor |
Bipolar Transistors - BJT NPN 12V 1.5A |
auf Bestellung 5624 Stücke: Lieferzeit 10-14 Tag (e) |
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2SD2652T106 | Rohm Semiconductor |
Description: TRANS NPN 12V 1.5A UMT3 Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 1.5 A Supplier Device Package: UMT3 Frequency - Transition: 400MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
auf Bestellung 5343 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SD2652-T106 | ROHM | SOT323 |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2SD2652T106 |
|
Hersteller: Rohm Semiconductor
Trans GP BJT NPN 12V 1.5A 200mW 3-Pin UMT T/R
Trans GP BJT NPN 12V 1.5A 200mW 3-Pin UMT T/R
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 537+ | 0.33 EUR |
| 557+ | 0.31 EUR |
| 1000+ | 0.3 EUR |
| 2SD2652T106 |
|
Hersteller: Rohm Semiconductor
Description: TRANS NPN 12V 1.5A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: UMT3
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS NPN 12V 1.5A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: UMT3
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.35 EUR |
| 2SD2652T106 |
|
Hersteller: Rohm Semiconductor
Trans GP BJT NPN 12V 1.5A 200mW 3-Pin UMT T/R
Trans GP BJT NPN 12V 1.5A 200mW 3-Pin UMT T/R
auf Bestellung 13210 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 492+ | 0.63 EUR |
| 538+ | 0.32 EUR |
| 1000+ | 0.3 EUR |
| 2000+ | 0.26 EUR |
| 6000+ | 0.23 EUR |
| 12000+ | 0.2 EUR |
| 2SD2652T106 |
|
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT NPN 12V 1.5A
Bipolar Transistors - BJT NPN 12V 1.5A
auf Bestellung 5624 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.06 EUR |
| 10+ | 0.7 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| 3000+ | 0.25 EUR |
| 2SD2652T106 |
|
Hersteller: Rohm Semiconductor
Description: TRANS NPN 12V 1.5A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: UMT3
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS NPN 12V 1.5A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: UMT3
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 5343 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.49 EUR |
| 23+ | 0.92 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.4 EUR |
| 2SD2652-T106 |
Hersteller: ROHM
SOT323
SOT323
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)