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2SD2657TL

2SD2657TL ROHM Semiconductor

datasheet?p=2SD2657&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT NPN 30V 1.5A
auf Bestellung 3413 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.11 EUR
10+0.68 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.3 EUR
3000+0.27 EUR
6000+0.24 EUR
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Technische Details 2SD2657TL ROHM Semiconductor

Description: TRANS NPN 30V 1.5A TSMT3, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 1.5 A, Supplier Device Package: TSMT3, Frequency - Transition: 300MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-96, Packaging: Tape & Reel (TR).

Weitere Produktangebote 2SD2657TL nach Preis ab 0.34 EUR bis 1.23 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
2SD2657TL 2SD2657TL Hersteller : Rohm Semiconductor datasheet?p=2SD2657&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 1.5A TSMT3
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: TSMT3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
auf Bestellung 2671 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
23+0.77 EUR
100+0.49 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
2SD2657TL 2SD2657TL Hersteller : Rohm Semiconductor datasheet?p=2SD2657&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 1.5A TSMT3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: TSMT3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH