Technische Details 2SD2705STP Rohm Semiconductor
Description: TRANS NPN 20V 0.3A SPT, Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: SC-72 Formed Leads, Packaging: Tape & Reel (TR), Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA, Operating Temperature: 150°C (TJ), Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 20 V, Current - Collector (Ic) (Max): 300 mA, Supplier Device Package: SPT, Frequency - Transition: 35MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 4ma, 2V, Current - Collector Cutoff (Max): 100nA (ICBO).
Weitere Produktangebote 2SD2705STP
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
2SD2705STP | Rohm Semiconductor |
 Description: TRANS NPN 20V 0.3A SPTTransistor Type: NPN Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Packaging: Tape & Reel (TR) Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Operating Temperature: 150°C (TJ) Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 300 mA Supplier Device Package: SPT Frequency - Transition: 35MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 4ma, 2V Current - Collector Cutoff (Max): 100nA (ICBO) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2SD2705STP |
|
Hersteller: Rohm Semiconductor
Description: TRANS NPN 20V 0.3A SPT
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Packaging: Tape & Reel (TR)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Operating Temperature: 150°C (TJ)
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: SPT
Frequency - Transition: 35MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 4ma, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Description: TRANS NPN 20V 0.3A SPT
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Packaging: Tape & Reel (TR)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Operating Temperature: 150°C (TJ)
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: SPT
Frequency - Transition: 35MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 4ma, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH