2SD600KE ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - 2SD600KE - 2SD600 - BIPOLAR NPN TRANSISTOR, 1A 100V
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details 2SD600KE ONSEMI
Description: TRANS NPN 120V 1A TO-126, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 5V, Frequency - Transition: 130MHz, Supplier Device Package: TO-126, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 1 W.
Weitere Produktangebote 2SD600KE nach Preis ab 0.51 EUR bis 0.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
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2SD600KE | onsemi |
Description: TRANS NPN 120V 1A TO-126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 5V Frequency - Transition: 130MHz Supplier Device Package: TO-126 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1 W |
auf Bestellung 31262 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SD600KE | ON Semiconductor |
Trans GP BJT NPN 120V 1A 1000mW 3-Pin TO-126 |
auf Bestellung 17600 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||
| 2SD600KE | ON Semiconductor |
Trans GP BJT NPN 120V 1A 1000mW 3-Pin TO-126 |
auf Bestellung 13662 Stücke: Lieferzeit 14-21 Tag (e) |
|
| 2SD600KE |
|
Hersteller: onsemi
Description: TRANS NPN 120V 1A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
Description: TRANS NPN 120V 1A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
auf Bestellung 31262 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 757+ | 0.71 EUR |
| 2SD600KE |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 120V 1A 1000mW 3-Pin TO-126
Trans GP BJT NPN 120V 1A 1000mW 3-Pin TO-126
auf Bestellung 17600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1140+ | 0.58 EUR |
| 10000+ | 0.51 EUR |
| 2SD600KE |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 120V 1A 1000mW 3-Pin TO-126
Trans GP BJT NPN 120V 1A 1000mW 3-Pin TO-126
auf Bestellung 13662 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1140+ | 0.58 EUR |
| 10000+ | 0.51 EUR |