2SD612KE onsemi
Hersteller: onsemi
Description: TRANS NPN 35V 2A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 1 W
| Anzahl | Preis |
|---|---|
| 757+ | 0.6 EUR |
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Technische Details 2SD612KE onsemi
Description: TRANS NPN 35V 2A TO-126, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 800mV @ 150mA, 1.5A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: TO-126, Part Status: Active, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 35 V, Power - Max: 1 W.
Weitere Produktangebote 2SD612KE nach Preis ab 0.48 EUR bis 0.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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|---|---|---|---|---|---|---|---|
| 2SD612KE | ON Semiconductor |
Trans GP BJT NPN 35V 2A 1000mW 3-Pin TO-126 |
auf Bestellung 7678 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SD612KE |
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Hersteller: ON Semiconductor
Trans GP BJT NPN 35V 2A 1000mW 3-Pin TO-126
Trans GP BJT NPN 35V 2A 1000mW 3-Pin TO-126
auf Bestellung 7678 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1140+ | 0.48 EUR |