2SD734E onsemi
Hersteller: onsemiDescription: 2SD734 - NPN EPITAXIAL PLANAR SI
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-NP
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
auf Bestellung 30260 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1025+ | 0.47 EUR |
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Technische Details 2SD734E onsemi
Description: 2SD734 - NPN EPITAXIAL PLANAR SI, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V, Frequency - Transition: 250MHz, Supplier Device Package: 3-NP, Part Status: Active, Current - Collector (Ic) (Max): 700 mA, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 600 mW.
Weitere Produktangebote 2SD734E nach Preis ab 0.43 EUR bis 0.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2SD734E | Hersteller : ON Semiconductor |
Trans GP BJT NPN 20V 0.7A 600mW 3-Pin NP |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SD734E | Hersteller : ONSEMI |
Description: ONSEMI - 2SD734E - 2SD734E, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 30260 Stücke: Lieferzeit 14-21 Tag (e) |