2SJ162-E Renesas Electronics Corporation

Description: MOSFET P-CH 160V 7A TO3P, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V, Drain to Source Voltage (Vdss): 160 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-3P, Power Dissipation (Max): 100W (Tc), Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.