2SJ168TE85LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET P-CH 60V 200MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.78 EUR |
| 6000+ | 0.74 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SJ168TE85LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 200MA SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V, Power Dissipation (Max): 200mW (Ta), Supplier Device Package: SC-59, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V.
Weitere Produktangebote 2SJ168TE85LF nach Preis ab 0.75 EUR bis 2.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2SJ168TE85LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 200MA SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V Power Dissipation (Max): 200mW (Ta) Supplier Device Package: SC-59 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V |
auf Bestellung 6855 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
2SJ168TE85LF | Hersteller : Toshiba |
MOSFET P-Ch Sm Sig FET Id -0.2A -60V 20V |
auf Bestellung 5689 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
2SJ168TE85LF Produktcode: 101280 |
Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
|