2SJ168TE85LF
Produktcode: 101280
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Transistoren > Transistoren P-Kanal-Feld
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Weitere Produktangebote 2SJ168TE85LF nach Preis ab 0.49 EUR bis 1.37 EUR
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2SJ168TE85LF | Hersteller : Toshiba |
MOSFET P-Ch Sm Sig FET Id -0.2A -60V 20V |
auf Bestellung 5689 Stücke: Lieferzeit 10-14 Tag (e) |
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2SJ168TE85LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 200MA SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V Power Dissipation (Max): 200mW (Ta) Supplier Device Package: SC-59 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V |
auf Bestellung 2999 Stücke: Lieferzeit 10-14 Tag (e) |
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2SJ168TE85LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 200MA SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V Power Dissipation (Max): 200mW (Ta) Supplier Device Package: SC-59 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V |
auf Bestellung 2999 Stücke: Lieferzeit 10-14 Tag (e) |