2SJ197-T1-AZ NEC

Description: 2SJ197-T1-AZ - P-CHANNEL MOS FET, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: SOT-89, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Bulk.