2SJ493-AZ Renesas Electronics America Inc

Description: P-CHANNEL POWER MOSFET, Part Status: Active, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: MP-45F, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 2W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3 Isolated Tab.