2SJ598-ZK-E1-AZ Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 6A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 6A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.65 EUR |
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Technische Details 2SJ598-ZK-E1-AZ Renesas Electronics Corporation
Description: MP-3ZK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 6A, 10V, Power Dissipation (Max): 1W (Ta), 23W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252 (MP-3ZK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V.
Weitere Produktangebote 2SJ598-ZK-E1-AZ nach Preis ab 0.86 EUR bis 2.32 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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2SJ598-ZK-E1-AZ | Hersteller : Renesas Electronics Corporation |
Description: MP-3ZK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 6A, 10V Power Dissipation (Max): 1W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 (MP-3ZK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V |
auf Bestellung 7983 Stücke: Lieferzeit 10-14 Tag (e) |
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2SJ598-ZK-E1-AZ | Hersteller : RENESAS |
Description: RENESAS - 2SJ598-ZK-E1-AZ - Leistungs-MOSFET, p-Kanal, 60 V, 12 A, 0.13 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: -V euEccn: NLR Verlustleistung: 23W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.13ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 4969 Stücke: Lieferzeit 14-21 Tag (e) |
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2SJ598-ZK-E1-AZ | Hersteller : RENESAS |
Description: RENESAS - 2SJ598-ZK-E1-AZ - Leistungs-MOSFET, p-Kanal, 60 V, 12 A, 0.13 ohm, TO-252 (DPAK), Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: -V euEccn: NLR Verlustleistung: 23W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.13ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 4969 Stücke: Lieferzeit 14-21 Tag (e) |
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2SJ598-ZK-E1-AZ | Hersteller : Renesas Electronics | MOSFET POWER TRS2 |
auf Bestellung 1468 Stücke: Lieferzeit 14-28 Tag (e) |
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2SJ598-ZK-E1-AZ |
auf Bestellung 3745 Stücke: Lieferzeit 21-28 Tag (e) |