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2SJ687-ZK-E1-AY

2SJ687-ZK-E1-AY Renesas Electronics Corporation

2sj687-data-sheet?r=1335351 Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 20V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V
Power Dissipation (Max): 1W (Ta), 36W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V
auf Bestellung 2669 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.05 EUR
10+3.31 EUR
100+2.44 EUR
500+2.05 EUR
1000+1.98 EUR
Mindestbestellmenge: 5
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Technische Details 2SJ687-ZK-E1-AY Renesas Electronics Corporation

Description: MOSFET P-CH 20V 20A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V, Power Dissipation (Max): 1W (Ta), 36W (Tc), Supplier Device Package: TO-252 (MP-3ZK), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V.

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2SJ687-ZK-E1-AY 2SJ687-ZK-E1-AY Hersteller : Renesas Electronics REN_D18719EJ2V0DS00_DST_20070501-2930605.pdf MOSFETs PCH POWER MOSFET -20V -20A 7MOHM DPAK
auf Bestellung 2483 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.29 EUR
10+3.57 EUR
100+2.85 EUR
250+2.73 EUR
500+2.41 EUR
1000+2.06 EUR
2500+1.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
2SJ687-ZK-E1-AY 2SJ687-ZK-E1-AY Hersteller : Renesas Electronics Corporation 2sj687-data-sheet?r=1335351 Description: MOSFET P-CH 20V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V
Power Dissipation (Max): 1W (Ta), 36W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V
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Im Einkaufswagen  Stück im Wert von  UAH