Produktrezensionen
Produktbewertung abgeben
Technische Details 2SK1058-E Renesas
Description: MOSFET N-CH 160V 7A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Power Dissipation (Max): 100W (Tc), Supplier Device Package: TO-3P, Part Status: Active, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 160 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V.
Weitere Produktangebote 2SK1058-E
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
2SK1058-E | Renesas Electronics Corporation |
 Description: MOSFET N-CH 160V 7A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Power Dissipation (Max): 100W (Tc) Supplier Device Package: TO-3P Part Status: Active Vgs (Max): ±15V Drain to Source Voltage (Vdss): 160 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
2SK1058-E | Renesas Electronics |
MOSFET Power MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2SK1058-E |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 160V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 160 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Description: MOSFET N-CH 160V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 160 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SK1058-E |
|
Hersteller: Renesas Electronics
MOSFET Power MOSFET
MOSFET Power MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH