2SK1058-E

2SK1058-E Renesas Electronics Corporation


2sk1056-2sk1057-2sk1058-datasheet Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 160V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 160 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
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Technische Details 2SK1058-E Renesas Electronics Corporation

Description: MOSFET N-CH 160V 7A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Power Dissipation (Max): 100W (Tc), Supplier Device Package: TO-3P, Part Status: Active, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 160 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V.

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2SK1058-E 2SK1058-E Hersteller : Renesas Electronics REN_rej03g0906_2sk1056ds_DST_20050907-2930679.pdf MOSFET Power MOSFET
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