2SK1526-E Renesas Electronics Corporation

Description: N-CHANNEL POWER MOSFET, Part Status: Active, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 10 V, Drain to Source Voltage (Vdss): 450 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3PL, Vgs(th) (Max) @ Id: 3V @ 1mA, Rds On (Max) @ Id, Vgs: 150mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3.