| Anzahl | Privatkunde |
|---|---|
| 1389+ | 0.48 EUR |
| 10000+ | 0.42 EUR |
| 100000+ | 0.35 EUR |
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Technische Details 2SK1582-T1B-A Renesas
Description: SMALL SIGNAL N-CHANNEL MOSFET, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 10V, Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 1.8V @ 1µA, Supplier Device Package: SC-59, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 5 V.
Weitere Produktangebote 2SK1582-T1B-A nach Preis ab 0.6 EUR bis 0.6 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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2SK1582-T1B-A | Renesas Electronics Corporation |
 Description: SMALL SIGNAL N-CHANNEL MOSFETPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 1µA Supplier Device Package: SC-59 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 5 V |
auf Bestellung 222980 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SK1582-T1B-A |
|
Hersteller: Renesas Electronics Corporation
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1µA
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 5 V
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1µA
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 5 V
auf Bestellung 222980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 922+ | 0.6 EUR |