2SK1775-E Renesas Electronics Corporation

Description: MOSFET N-CH 900V 8A TO3P, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3P, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.