2SK1829TE85LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 20V 50MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Power Dissipation (Max): 100mW (Ta)
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
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Technische Details 2SK1829TE85LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 50MA SC70, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50mA (Ta), Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V, Power Dissipation (Max): 100mW (Ta), Supplier Device Package: SC-70, Drive Voltage (Max Rds On, Min Rds On): 2.5V, Vgs (Max): 10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V.
Weitere Produktangebote 2SK1829TE85LF
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2SK1829TE85LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 50MA SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V Power Dissipation (Max): 100mW (Ta) Supplier Device Package: SC-70 Drive Voltage (Max Rds On, Min Rds On): 2.5V Vgs (Max): 10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V |
Produkt ist nicht verfügbar |
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2SK1829TE85LF | Hersteller : Toshiba |
MOSFET N-Ch Sm Sig FET Id 0.05A 20V 10V |
Produkt ist nicht verfügbar |