Produktrezensionen
Produktbewertung abgeben
Technische Details 2SK1958-T1-A Renesas
Description: 2SK1958-T1-A - N-CHANNEL MOS FET, Packaging: Bulk, Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 10µA, Supplier Device Package: 8-MMPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±7V, Drain to Source Voltage (Vdss): 16 V, Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 3 V.
Weitere Produktangebote 2SK1958-T1-A nach Preis ab 0.14 EUR bis 0.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| 2SK1958-T1-A | Renesas |
 Description: 2SK1958-T1-A - N-CHANNEL MOS FETPackaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 10µA Supplier Device Package: 8-MMPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±7V Drain to Source Voltage (Vdss): 16 V Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 3 V |
auf Bestellung 69067 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SK1958-T1-A |
|
Hersteller: Renesas
Description: 2SK1958-T1-A - N-CHANNEL MOS FET
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 8-MMPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 16 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 3 V
Description: 2SK1958-T1-A - N-CHANNEL MOS FET
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 8-MMPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 16 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 3 V
auf Bestellung 69067 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4459+ | 0.14 EUR |