Technische Details 2SK208-R TOSHIBA
Category: SMD N channel transistors, Description: Transistor: N-JFET; unipolar; 0.75mA; 0.1W; SC59; Igt: 10mA, Type of transistor: N-JFET, Drain current: 0.75mA, Power dissipation: 0.1W, Gate-source voltage: -50V, Mounting: SMD, Gate current: 10mA, Polarisation: unipolar, Kind of package: reel; tape, Case: SC59.
Weitere Produktangebote 2SK208-R
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| 2SK208-R(TE85L,F) | TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 0.75mA; 0.1W; SC59; Igt: 10mA Type of transistor: N-JFET Drain current: 0.75mA Power dissipation: 0.1W Gate-source voltage: -50V Mounting: SMD Gate current: 10mA Polarisation: unipolar Kind of package: reel; tape Case: SC59 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2SK208-R(TE85L,F) |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 0.75mA; 0.1W; SC59; Igt: 10mA
Type of transistor: N-JFET
Drain current: 0.75mA
Power dissipation: 0.1W
Gate-source voltage: -50V
Mounting: SMD
Gate current: 10mA
Polarisation: unipolar
Kind of package: reel; tape
Case: SC59
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 0.75mA; 0.1W; SC59; Igt: 10mA
Type of transistor: N-JFET
Drain current: 0.75mA
Power dissipation: 0.1W
Gate-source voltage: -50V
Mounting: SMD
Gate current: 10mA
Polarisation: unipolar
Kind of package: reel; tape
Case: SC59
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH