Technische Details 2SK208-R TOSHIBA
Category: SMD N channel transistors, Description: Transistor: N-JFET; unipolar; 0.75mA; 0.1W; SC59; Igt: 10mA, Type of transistor: N-JFET, Polarisation: unipolar, Drain current: 0.75mA, Power dissipation: 0.1W, Case: SC59, Gate-source voltage: -50V, Mounting: SMD, Kind of package: reel; tape, Gate current: 10mA.
Weitere Produktangebote 2SK208-R
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| 2SK208-R(TE85L,F) | TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 0.75mA; 0.1W; SC59; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 0.75mA Power dissipation: 0.1W Case: SC59 Gate-source voltage: -50V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2SK208-R(TE85L,F) |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 0.75mA; 0.1W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 0.75mA
Power dissipation: 0.1W
Case: SC59
Gate-source voltage: -50V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 0.75mA; 0.1W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 0.75mA
Power dissipation: 0.1W
Case: SC59
Gate-source voltage: -50V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH