2SK2103T100 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A MPT3
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: MPT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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Technische Details 2SK2103T100 Rohm Semiconductor
Description: MOSFET N-CH 30V 2A MPT3, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Not For New Designs, Supplier Device Package: MPT3, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2SK2103T100 nach Preis ab 0.67 EUR bis 2.07 EUR
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2SK2103T100 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 2A MPT3 Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Not For New Designs Supplier Device Package: MPT3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
auf Bestellung 1546 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SK2103 T100 | ROHM |
auf Bestellung 6500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| 2SK2103T100 | ROHM |
|
auf Bestellung 6500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2SK2103T100 |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A MPT3
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: MPT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 2A MPT3
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Not For New Designs
Supplier Device Package: MPT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 1546 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.07 EUR |
| 17+ | 1.31 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.67 EUR |
| 2SK2103 T100 |
Hersteller: ROHM
auf Bestellung 6500 Stücke:
Lieferzeit 21-28 Tag (e)
| 2SK2103T100 |
|
Hersteller: ROHM
auf Bestellung 6500 Stücke:
Lieferzeit 21-28 Tag (e)