Technische Details 2SK2713 ROHM
Description: MOSFET N-CH 450V 5A TO220FN, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V, Drain to Source Voltage (Vdss): 450 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FN, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.
Weitere Produktangebote 2SK2713
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2SK2713 | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 450V 5A TO220FNInput Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V Drain to Source Voltage (Vdss): 450 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220FN Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
Produkt ist nicht verfügbar |
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| 2SK2713 | Hersteller : ROHM Semiconductor |
MOSFET Discrete Semiconductor Products |
Produkt ist nicht verfügbar |