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2SK2744(F) Toshiba

2SK2744%20Rev2009.pdf Hersteller: Toshiba
Trans MOSFET N-CH Si 50V 45A 3-Pin(3+Tab) TO-3PN
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Technische Details 2SK2744(F) Toshiba

Description: MOSFET N-CH 50V 45A TO3P, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: TO-3P(N), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V.

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2SK2744(F) 2SK2744(F) Hersteller : Toshiba Semiconductor and Storage 2SK2744%20Rev2009.pdf Description: MOSFET N-CH 50V 45A TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-3P(N)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
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