2SK2845(TE16L1,Q) Toshiba Semiconductor and Storage

Description: MOSFET N-CH 900V 1A DP, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PW-MOLD, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 9Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).