2SK2847(F)
Hersteller: auf Bestellung 1080 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details 2SK2847(F)
Description: MOSFET N-CH 900V 8A TO3PIS, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-3P(N)IS, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V.
Weitere Produktangebote 2SK2847(F)
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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2SK2847(F) | Hersteller : Toshiba |
Trans MOSFET N-CH Si 900V 8A 3-Pin(3+Tab) TO-3P(N)IS |
Produkt ist nicht verfügbar |
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2SK2847(F) | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 900V 8A TO3PIS Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3P(N)IS Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V |
Produkt ist nicht verfügbar |
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2SK2847(F) | Hersteller : Toshiba |
MOSFET N-ch 900V 8A 1.1 ohm |
Produkt ist nicht verfügbar |