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Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 57+ | 2.62 EUR |
| 60+ | 2.41 EUR |
| 100+ | 2.28 EUR |
| 200+ | 2.18 EUR |
| 800+ | 2.04 EUR |
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Technische Details 2SK2967(F) Toshiba
Description: MOSFET N-CH 250V 30A TO3P, Packaging: Tray, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: TO-3P(N), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V.
Weitere Produktangebote 2SK2967(F)
| Foto | Bezeichnung | Hersteller | Beschreibung |
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2SK2967(F) | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 250V 30A TO3PPackaging: Tray Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-3P(N) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V |
Produkt ist nicht verfügbar |
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| 2SK2967(F) | Hersteller : Toshiba |
MOSFET Pb-F TO3PN PLN,ACTIVE, |
Produkt ist nicht verfügbar |