2SK3018 Shenzhen Slkormicro Semicon Co., Ltd.
Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 100MA 8@4.5V,50MA 200MW 2V 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 400mA, 10V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.024 EUR |
| 6000+ | 0.021 EUR |
| 9000+ | 0.02 EUR |
| 15000+ | 0.018 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SK3018 Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 100MA 8@4.5V,50MA 200MW 2V 1, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA, Rds On (Max) @ Id, Vgs: 7.5Ohm @ 400mA, 10V, Power Dissipation (Max): 200mW, Vgs(th) (Max) @ Id: 2V @ 100µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.
Weitere Produktangebote 2SK3018 nach Preis ab 0.018 EUR bis 0.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
2SK3018 | kuu semiconductor |
Transistor N-MOSFET; 30V; 20V; 13Ohm; 100mA; 200mW; -55°C ~ 150°C; Equivalent: K2SK3018-7-F; 2SK3018 KUU T2SK3018 KUU Anzahl je Verpackung: 100 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||
|
|
2SK3018 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 100MA 8@4.5V,50MA 200MW 2V 1 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 7.5Ohm @ 400mA, 10V Power Dissipation (Max): 200mW Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
auf Bestellung 1296 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| 2SK3018 | HT Jinyu Semiconductor |
N-Channel Enhancement Mode MOSFET |
auf Bestellung 393000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| 2SK3018 |
|
Hersteller: kuu semiconductor
Transistor N-MOSFET; 30V; 20V; 13Ohm; 100mA; 200mW; -55°C ~ 150°C; Equivalent: K2SK3018-7-F; 2SK3018 KUU T2SK3018 KUU
Anzahl je Verpackung: 100 Stücke
Transistor N-MOSFET; 30V; 20V; 13Ohm; 100mA; 200mW; -55°C ~ 150°C; Equivalent: K2SK3018-7-F; 2SK3018 KUU T2SK3018 KUU
Anzahl je Verpackung: 100 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 400+ | 0.07 EUR |
| 2SK3018 |
|
Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 100MA 8@4.5V,50MA 200MW 2V 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 400mA, 10V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: 30V 100MA 8@4.5V,50MA 200MW 2V 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 400mA, 10V
Power Dissipation (Max): 200mW
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 1296 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 125+ | 0.14 EUR |
| 223+ | 0.079 EUR |
| 367+ | 0.048 EUR |
| 512+ | 0.034 EUR |
| 1000+ | 0.03 EUR |
| 2SK3018 |
|
Hersteller: HT Jinyu Semiconductor
N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
auf Bestellung 393000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6061+ | 0.024 EUR |
| 60000+ | 0.021 EUR |
| 300000+ | 0.018 EUR |