auf Bestellung 393000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6061+ | 0.024 EUR |
| 60000+ | 0.02 EUR |
| 300000+ | 0.017 EUR |
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Technische Details 2SK3018 HT Jinyu Semiconductor
Description: 30V 100MA 8@4.5V,50MA 200MW 2V 1, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA, Rds On (Max) @ Id, Vgs: 7.5Ohm @ 400mA, 10V, Power Dissipation (Max): 200mW, Vgs(th) (Max) @ Id: 2V @ 100µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.
Weitere Produktangebote 2SK3018 nach Preis ab 0.072 EUR bis 0.072 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| 2SK3018 | Hersteller : kuu semiconductor |
 Transistor N-MOSFET; 30V; 20V; 13Ohm; 100mA; 200mW; -55°C ~ 150°C; Equivalent: K2SK3018-7-F; 2SK3018 KUU T2SK3018 KUUAnzahl je Verpackung: 100 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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2SK3018 | Hersteller : Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 100MA 8@4.5V,50MA 200MW 2V 1 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 7.5Ohm @ 400mA, 10V Power Dissipation (Max): 200mW Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
Produkt ist nicht verfügbar |
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2SK3018 | Hersteller : Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 100MA 8@4.5V,50MA 200MW 2V 1 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 7.5Ohm @ 400mA, 10V Power Dissipation (Max): 200mW Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
Produkt ist nicht verfügbar |
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| 2SK3018 | Hersteller : ROHM Semiconductor |
MOSFETs |
Produkt ist nicht verfügbar |