2SK3019 Shenzhen Slkormicro Semicon Co., Ltd.
Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 100MA 8@4V,10MA 150MW 1.5V 1
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 5 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.048 EUR |
| 6000+ | 0.043 EUR |
| 9000+ | 0.039 EUR |
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Technische Details 2SK3019 Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 100MA 8@4V,10MA 150MW 1.5V 1, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: SOT-523, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 5 V.
Weitere Produktangebote 2SK3019 nach Preis ab 0.058 EUR bis 0.25 EUR
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2SK3019 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 100MA 8@4V,10MA 150MW 1.5V 1 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 5 V |
auf Bestellung 2448 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| 2SK3019 | ROHM |
09+ |
auf Bestellung 132036 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2SK3019 |
|
Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 100MA 8@4V,10MA 150MW 1.5V 1
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 5 V
Description: 30V 100MA 8@4V,10MA 150MW 1.5V 1
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 5 V
auf Bestellung 2448 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 84+ | 0.25 EUR |
| 139+ | 0.15 EUR |
| 226+ | 0.093 EUR |
| 500+ | 0.067 EUR |
| 1000+ | 0.058 EUR |
| 2SK3019 |
|
Hersteller: ROHM
09+
09+
auf Bestellung 132036 Stücke:
Lieferzeit 21-28 Tag (e)