2SK3309(Q) Toshiba Semiconductor and Storage

Description: MOSFET N-CH 450V 10A TO220FL, Package / Case: TO-220-3, Short Tab, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 450 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FL, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 65W (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole.