2SK3431-Z-E1-AZ Renesas Electronics Corporation

Description: MOSFET N-CH 40V 83A TO220AB, Power Dissipation (Max): 1.5W (Ta), 100W (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 42A, 10V, Current - Continuous Drain (Id) @ 25°C: 83A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: TO-220AB.