Technische Details 2SK3564(STA4,Q,M) Toshiba
Description: MOSFET N-CH 900V 3A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1.5A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V.
Weitere Produktangebote 2SK3564(STA4,Q,M) nach Preis ab 1.09 EUR bis 1.60 EUR
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| 2SK3564(STA4,Q,M) | Hersteller : TOSHIBA |
 2SK3564 THT N channel transistors |
auf Bestellung 103 Stücke: Lieferzeit 7-14 Tag (e) |
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2SK3564(STA4,Q,M) | Hersteller : Toshiba |
Trans MOSFET N-CH Si 900V 3A 3-Pin(3+Tab) TO-220SIS |
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2SK3564(STA4,Q,M) | Hersteller : Toshiba |
Trans MOSFET N-CH Si 900V 3A 3-Pin(3+Tab) TO-220SIS |
Produkt ist nicht verfügbar |
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2SK3564(STA4,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 900V 3A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
Produkt ist nicht verfügbar |
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2SK3564(STA4,Q,M) | Hersteller : Toshiba |
MOSFETs POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ |
Produkt ist nicht verfügbar |