2SK3635-Z-E1-AZ Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: MOSFET N-CH 200V 8A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252 (MP-3Z)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 10 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 254+ | 1.93 EUR |
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Technische Details 2SK3635-Z-E1-AZ Renesas Electronics Corporation
Description: MOSFET N-CH 200V 8A TO252, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V, Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-252 (MP-3Z), Part Status: Obsolete, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 10 V.
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2SK3635-Z-E1-AZ | Hersteller : Renesas Electronics |
MOSFET |
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