Weitere Produktangebote 2SK3709 nach Preis ab 4.65 EUR bis 4.65 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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2SK3709 | onsemi |
 Description: MOSFET N-CH 100V 37A TO220MLInput Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Part Status: Obsolete Supplier Device Package: TO-220ML Power Dissipation (Max): 2W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
auf Bestellung 22227 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SK3709 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 37A TO220ML
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Obsolete
Supplier Device Package: TO-220ML
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 100V 37A TO220ML
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Obsolete
Supplier Device Package: TO-220ML
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 22227 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 106+ | 4.65 EUR |