2SK3793-AZ Renesas Electronics Corporation

Description: MOSFET N-CH 100V 12A TO220, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-220 Isolated Tab, Power Dissipation (Max): 2W (Ta), 20W (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Isolated Tab, Packaging: Bulk.