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2SK3798(STA4,Q,M)

2SK3798(STA4,Q,M) Toshiba


2SK3798_datasheet_en_20131101-1649824.pdf Hersteller: Toshiba
MOSFETs POWER MOSFET TRANSISTOR TO-220(SIS)PD=40W F=1MHZ
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Technische Details 2SK3798(STA4,Q,M) Toshiba

Description: POWER MOSFET TRANSISTOR TO-220(S, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V.

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2SK3798(STA4,Q,M) 2SK3798(STA4,Q,M) Hersteller : Toshiba 62sk3798_datasheet_en_20131101.pdf.pdf Trans MOSFET N-CH Si 900V 4A 3-Pin(3+Tab) TO-220SIS
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2SK3798(STA4,Q,M) 2SK3798(STA4,Q,M) Hersteller : Toshiba docget.pdf Trans MOSFET N-CH Si 900V 4A 3-Pin(3+Tab) TO-220SIS
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2SK3798(STA4,Q,M) Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=1724&prodName=2SK3798 Description: POWER MOSFET TRANSISTOR TO-220(S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH