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2SK4065-E onsemi
Hersteller: onsemi
Description: MOSFET N-CH 75V 100A SMP
Packaging: Bulk
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: SMP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
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Technische Details 2SK4065-E onsemi
Description: MOSFET N-CH 75V 100A SMP, Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: SMP, Power Dissipation (Max): 1.65W (Ta), 90W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Short Tab, Packaging: Bag.
Weitere Produktangebote 2SK4065-E nach Preis ab 10.1 EUR bis 10.1 EUR
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2SK4065-E | onsemi |
Description: MOSFET N-CH 75V 100A SMP Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: SMP Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3, Short Tab Packaging: Bag |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SK4065-E |
Hersteller: onsemi
Description: MOSFET N-CH 75V 100A SMP
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: SMP
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab
Packaging: Bag
Description: MOSFET N-CH 75V 100A SMP
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: SMP
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab
Packaging: Bag
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 49+ | 10.1 EUR |