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2SK4066-1E

2SK4066-1E onsemi

ONSMS35711-1.pdf?t.download=true&u=5oefqw Hersteller: onsemi
Description: MOSFET N-CH 60V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
auf Bestellung 14483 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
153+4.85 EUR
Mindestbestellmenge: 153
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Technische Details 2SK4066-1E onsemi

Description: MOSFET N-CH 60V 100A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V, Power Dissipation (Max): 1.65W (Ta), 90W (Tc), Supplier Device Package: TO-262-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V.

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2SK4066-1E 2SK4066-1E Hersteller : ONSEMI ONSMS35711-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - 2SK4066-1E - 2SK4066-1E, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 14483 Stücke:
Lieferzeit 14-21 Tag (e)
2SK4066-1E Hersteller : ON Semiconductor 1202sk4066-d.pdf Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) I2PAK Tube
Produkt ist nicht verfügbar
2SK4066-1E 2SK4066-1E Hersteller : onsemi ONSMS35711-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
Produkt ist nicht verfügbar