| Anzahl | Privatkunde |
|---|---|
| 364+ | 1.82 EUR |
| 500+ | 1.61 EUR |
| 1000+ | 1.45 EUR |
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Technische Details 2SK4151TZ-E Renesas
Description: MOSFET N-CH 150V 1A TO92, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 1.95Ohm @ 500mA, 4V, Power Dissipation (Max): 750mW (Ta), Supplier Device Package: TO-92, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 10 V.
Weitere Produktangebote 2SK4151TZ-E
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
2SK4151TZ-E | Renesas Electronics Corporation |
Description: MOSFET N-CH 150V 1A TO92Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 1.95Ohm @ 500mA, 4V Power Dissipation (Max): 750mW (Ta) Supplier Device Package: TO-92 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
2SK4151TZ-E | Renesas Electronics |
MOSFET MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2SK4151TZ-E |
![]() |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 150V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 500mA, 4V
Power Dissipation (Max): 750mW (Ta)
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 10 V
Description: MOSFET N-CH 150V 1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 500mA, 4V
Power Dissipation (Max): 750mW (Ta)
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SK4151TZ-E |
![]() |
Hersteller: Renesas Electronics
MOSFET MOSFET
MOSFET MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH




