
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
364+ | 1.51 EUR |
500+ | 1.31 EUR |
1000+ | 1.16 EUR |
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Technische Details 2SK4151TZ-E Renesas
Description: MOSFET N-CH 150V 1A TO92, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 1.95Ohm @ 500mA, 4V, Power Dissipation (Max): 750mW (Ta), Supplier Device Package: TO-92, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 10 V.
Weitere Produktangebote 2SK4151TZ-E
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2SK4151TZ-E | Hersteller : Renesas Electronics Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 1.95Ohm @ 500mA, 4V Power Dissipation (Max): 750mW (Ta) Supplier Device Package: TO-92 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 10 V |
Produkt ist nicht verfügbar |
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2SK4151TZ-E | Hersteller : Renesas Electronics |
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Produkt ist nicht verfügbar |