| Anzahl | Preis |
|---|---|
| 3+ | 1.26 EUR |
| 10+ | 0.77 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.3 EUR |
| 6000+ | 0.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SK880-Y(TE85L,F) Toshiba
Description: JFET N-CH 50V USM, Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V, Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA, Power - Max: 100 mW, Part Status: Active, Voltage - Breakdown (V(BR)GSS): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V, FET Type: N-Channel, Operating Temperature: 125°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Supplier Device Package: USM.
Weitere Produktangebote 2SK880-Y(TE85L,F) nach Preis ab 0.52 EUR bis 1.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
2SK880-Y(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
 Description: JFET N-CH 50V USMPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Supplier Device Package: USM Part Status: Active Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V |
auf Bestellung 277 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
|
|
2SK880-Y(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V USM Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA Power - Max: 100 mW Part Status: Active Voltage - Breakdown (V(BR)GSS): 50 V Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V FET Type: N-Channel Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Supplier Device Package: USM |
Produkt ist nicht verfügbar |