| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.5 EUR |
| 10+ | 0.92 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.43 EUR |
| 3000+ | 0.36 EUR |
| 6000+ | 0.33 EUR |
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Technische Details 2SK880-Y(TE85L,F) Toshiba
Description: JFET N-CH 50V USM, Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V, Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA, Power - Max: 100 mW, Part Status: Active, Voltage - Breakdown (V(BR)GSS): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V, FET Type: N-Channel, Operating Temperature: 125°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Supplier Device Package: USM.
Weitere Produktangebote 2SK880-Y(TE85L,F) nach Preis ab 0.62 EUR bis 1.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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2SK880-Y(TE85L,F) | Toshiba Semiconductor and Storage |
 Description: JFET N-CH 50V USMPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Supplier Device Package: USM Part Status: Active Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V |
auf Bestellung 277 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SK880-Y(TE85L,F) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: USM
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Description: JFET N-CH 50V USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: USM
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
auf Bestellung 277 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.52 EUR |
| 23+ | 0.94 EUR |
| 100+ | 0.62 EUR |