2SK880GRTE85LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: SC-70
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
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Technische Details 2SK880GRTE85LF Toshiba Semiconductor and Storage
Description: JFET N-CH 50V SC70, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 125°C (TJ), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V, Voltage - Breakdown (V(BR)GSS): 50 V, Supplier Device Package: SC-70, Part Status: Active, Power - Max: 100 mW, Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA, Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V.
Weitere Produktangebote 2SK880GRTE85LF nach Preis ab 0.27 EUR bis 1.13 EUR
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2SK880GRTE85LF | Toshiba |
JFETs N-Ch Junction FET 10mA -50V VGDS |
auf Bestellung 16619 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK880GRTE85LF | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V SC70Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA Power - Max: 100 mW Part Status: Active Supplier Device Package: SC-70 Voltage - Breakdown (V(BR)GSS): 50 V Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V FET Type: N-Channel Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
auf Bestellung 5411 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SK880GRTE85LF |
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Hersteller: Toshiba
JFETs N-Ch Junction FET 10mA -50V VGDS
JFETs N-Ch Junction FET 10mA -50V VGDS
auf Bestellung 16619 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.11 EUR |
| 10+ | 0.71 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.3 EUR |
| 6000+ | 0.27 EUR |
| 2SK880GRTE85LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V SC70
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Power - Max: 100 mW
Part Status: Active
Supplier Device Package: SC-70
Voltage - Breakdown (V(BR)GSS): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
FET Type: N-Channel
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: JFET N-CH 50V SC70
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Power - Max: 100 mW
Part Status: Active
Supplier Device Package: SC-70
Voltage - Breakdown (V(BR)GSS): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
FET Type: N-Channel
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 5411 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.13 EUR |
| 25+ | 0.73 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |


