30C02MH-TL-H onsemi
Hersteller: onsemi
Description: TRANS NPN 30V 0.7A 3-MCPH
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Obsolete
Supplier Device Package: 3-MCPH
Frequency - Transition: 540MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Produktrezensionen
Produktbewertung abgeben
Technische Details 30C02MH-TL-H onsemi
Description: TRANS NPN 30V 0.7A 3-MCPH, Power - Max: 600 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 700 mA, Part Status: Obsolete, Supplier Device Package: 3-MCPH, Frequency - Transition: 540MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote 30C02MH-TL-H
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
30C02MH-TL-H | onsemi |
Description: TRANS NPN 30V 0.7A 3-MCPH Power - Max: 600 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 700 mA Part Status: Obsolete Supplier Device Package: 3-MCPH Frequency - Transition: 540MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
30C02MH-TL-H | onsemi |
Bipolar Transistors - BJT BIP NPN 30V 0.7A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 30C02MH-TL-H |
|
Hersteller: onsemi
Description: TRANS NPN 30V 0.7A 3-MCPH
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Obsolete
Supplier Device Package: 3-MCPH
Frequency - Transition: 540MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS NPN 30V 0.7A 3-MCPH
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Obsolete
Supplier Device Package: 3-MCPH
Frequency - Transition: 540MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 30C02MH-TL-H |
|
Hersteller: onsemi
Bipolar Transistors - BJT BIP NPN 30V 0.7A
Bipolar Transistors - BJT BIP NPN 30V 0.7A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH