30C02S-TL-E ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - 30C02S-TL-E - 30C02S - BIP NPN 0.6A 30V
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details 30C02S-TL-E ONSEMI
Description: TRANS NPN 30V 0.6A 3-SMCP, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 600 mA, Supplier Device Package: 3-SMCP, Frequency - Transition: 540MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Bulk.
Weitere Produktangebote 30C02S-TL-E nach Preis ab 0.12 EUR bis 0.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| 30C02S-TL-E | onsemi |
Description: TRANS NPN 30V 0.6A 3-SMCP Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 600 mA Supplier Device Package: 3-SMCP Frequency - Transition: 540MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Bulk |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| 30C02S-TL-E | ON Semiconductor |
Trans GP BJT NPN 30V 0.6A 200mW 3-Pin SMCP |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| 30C02S-TL-E |
|
Hersteller: onsemi
Description: TRANS NPN 30V 0.6A 3-SMCP
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: 3-SMCP
Frequency - Transition: 540MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Bulk
Description: TRANS NPN 30V 0.6A 3-SMCP
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: 3-SMCP
Frequency - Transition: 540MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Bulk
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5453+ | 0.12 EUR |
| 30C02S-TL-E |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 30V 0.6A 200mW 3-Pin SMCP
Trans GP BJT NPN 30V 0.6A 200mW 3-Pin SMCP
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5672+ | 0.12 EUR |