Technische Details 30JL2C41(F) TOSHIBA
Description: DIODE ARRAY GP 600V 15A TO3P, Current - Reverse Leakage @ Vr: 50 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-3P(N), Current - Average Rectified (Io) (per Diode): 15A, Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Bulk.
Weitere Produktangebote 30JL2C41(F)
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30JL2C41(F) | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 600V 15A TO3P Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-3P(N) Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Bulk |
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