30KPA33Ae3/TR13 Microchip Technology
Hersteller: Microchip TechnologyDescription: TVS DIODE 33VWM 58.5VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 517.9A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.9V
Voltage - Clamping (Max) @ Ipp: 58.5V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
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Technische Details 30KPA33Ae3/TR13 Microchip Technology
Description: TVS DIODE 33VWM 58.5VC P600, Packaging: Tape & Reel (TR), Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 517.9A, Voltage - Reverse Standoff (Typ): 33V, Supplier Device Package: P600, Unidirectional Channels: 1, Voltage - Breakdown (Min): 36.9V, Voltage - Clamping (Max) @ Ipp: 58.5V, Power - Peak Pulse: 30000W (30kW), Power Line Protection: No.
Weitere Produktangebote 30KPA33Ae3/TR13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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30KPA33Ae3/TR13 | Hersteller : Microchip Technology |
ESD Protection Diodes / TVS Diodes TVS 30000W, Stand-off voltage = 33V, +/- 5%, Uni-dir |
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