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30KPA75CAe3/TR13 Microchip Technology


11108-sd89a-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 75VWM 119.4VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 253.8A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.8V
Voltage - Clamping (Max) @ Ipp: 119.4V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
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Technische Details 30KPA75CAe3/TR13 Microchip Technology

Description: TVS DIODE 75VWM 119.4VC P600, Packaging: Tape & Reel (TR), Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 253.8A, Voltage - Reverse Standoff (Typ): 75V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 83.8V, Voltage - Clamping (Max) @ Ipp: 119.4V, Power - Peak Pulse: 30000W (30kW), Power Line Protection: No.

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30KPA75CAe3/TR13 Microsemi RF01132_rB-600445.pdf ESD Suppressors / TVS Diodes Transient Voltage Suppressor
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30KPA75CAe3/TR13 30KPA75CAe3/TR13 MICROCHIP TECHNOLOGY 11108-sd89a-datasheet Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 83.8V; 253.8A; bidirectional; P600; 30kW; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 75V
Breakdown voltage: 83.8V
Max. forward impulse current: 253.8A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Manufacturer standard package: 800pcs.
Operating temperature: -55...175°C
Number of channels: 1
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Mindestbestellmenge: 800 Stücke
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30KPA75CAe3/TR13 RF01132_rB-600445.pdf
Hersteller: Microsemi
ESD Suppressors / TVS Diodes Transient Voltage Suppressor
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30KPA75CAe3/TR13 11108-sd89a-datasheet
Hersteller: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 83.8V; 253.8A; bidirectional; P600; 30kW; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 30kW
Max. off-state voltage: 75V
Breakdown voltage: 83.8V
Max. forward impulse current: 253.8A
Semiconductor structure: bidirectional
Case: P600
Mounting: THT
Leakage current: 2µA
Kind of package: reel; tape
Manufacturer standard package: 800pcs.
Operating temperature: -55...175°C
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH