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Technische Details 3SK291(TE85L,F) Toshiba
Description: RF MOSFET 6V SMQ, Current - Test: 10 mA, Voltage - Test: 6 V, Voltage - Rated: 12.5 V, Supplier Device Package: SMQ, Noise Figure: 2.5dB, Technology: MOSFET (Metal Oxide), Gain: 22.5dB, Configuration: N-Channel Dual Gate, Frequency: 800MHz, Mounting Type: Surface Mount, Current Rating (Amps): 30mA, Package / Case: SC-61AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote 3SK291(TE85L,F)
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
3SK291(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF MOSFET 6V SMQ Packaging: Cut Tape (CT) Package / Case: SC-61AA Current Rating (Amps): 30mA Mounting Type: Surface Mount Frequency: 800MHz Configuration: N-Channel Dual Gate Gain: 22.5dB Technology: MOSFET (Metal Oxide) Noise Figure: 2.5dB Supplier Device Package: SMQ Voltage - Rated: 12.5 V Voltage - Test: 6 V Current - Test: 10 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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|
3SK291(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF MOSFET 6V SMQ Current - Test: 10 mA Voltage - Test: 6 V Voltage - Rated: 12.5 V Supplier Device Package: SMQ Noise Figure: 2.5dB Technology: MOSFET (Metal Oxide) Gain: 22.5dB Configuration: N-Channel Dual Gate Frequency: 800MHz Mounting Type: Surface Mount Current Rating (Amps): 30mA Package / Case: SC-61AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 3SK291(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 6V SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 22.5dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.5dB
Supplier Device Package: SMQ
Voltage - Rated: 12.5 V
Voltage - Test: 6 V
Current - Test: 10 mA
Description: RF MOSFET 6V SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 22.5dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.5dB
Supplier Device Package: SMQ
Voltage - Rated: 12.5 V
Voltage - Test: 6 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 3SK291(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 6V SMQ
Current - Test: 10 mA
Voltage - Test: 6 V
Voltage - Rated: 12.5 V
Supplier Device Package: SMQ
Noise Figure: 2.5dB
Technology: MOSFET (Metal Oxide)
Gain: 22.5dB
Configuration: N-Channel Dual Gate
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 30mA
Package / Case: SC-61AA
Packaging: Tape & Reel (TR)
Description: RF MOSFET 6V SMQ
Current - Test: 10 mA
Voltage - Test: 6 V
Voltage - Rated: 12.5 V
Supplier Device Package: SMQ
Noise Figure: 2.5dB
Technology: MOSFET (Metal Oxide)
Gain: 22.5dB
Configuration: N-Channel Dual Gate
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 30mA
Package / Case: SC-61AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH